Engineering the metal gate electrode for controlling the threshold voltage of organic transistors

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

  Chung, Yoonyoung ^a,b   Johnson, Olasupo ^a   Deal, Michael ^a   Nishi, Yoshio ^a   Murmann, Boris ^a   Bao, Zhenan ^a  

^a Stanford University   (United States)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; GATE ELECTRODES; METAL BILAYERS; METAL GATE; METAL GATE ELECTRODES; METALLIC MATERIAL; N-CHANNEL; ORGANIC TRANSISTOR; PENTACENES; SUPPLY VOLTAGES;

ORGANIC FIELD EFFECT TRANSISTORS; PLATINUM; TITANIUM;

THRESHOLD VOLTAGE;

EID: 84865142656     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4739511     Document Type: Article

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