Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks

Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

  Chung, Yoonyoung ^a   Murmann, Boris ^a   Selvarasah, Selvapraba ^b   Dokmeci, Mehmet R ^b   Bao, Zhenan ^a  

^a Stanford University   (United States)

^b Northeastern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; CHANNEL LENGTH; CONTACT GEOMETRY; FIELD-EFFECT MOBILITIES; LOW OPERATING VOLTAGE; LOW-VOLTAGE; NANO-METER-SCALE; PARYLENE C; PENTACENES; SHADOW MASK;

ALUMINA; ALUMINUM COATINGS; GATE DIELECTRICS; GATES (TRANSISTOR); SEMICONDUCTING ORGANIC COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 77950483011     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3336009     Document Type: Article

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