Dual threshold voltage organic thin-film transistor technology

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 3027-3032

  Nausieda, Ivan ^a   Ryu, Kevin Kyungbum ^a   He, David Da ^a   Akinwande, Akintunde Ibitayo ^a   Bulović, Vladimir ^a   Sodini, Charles G ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Digital integrated circuits; inverters; organic compounds; thin film transistors (TFTs)

Indexed keywords

AREA EFFICIENT; CHANNEL TRANSISTORS; CURRENT SOURCES; CURRENT VOLTAGE; DUAL THRESHOLD VOLTAGE; FUNCTIONAL AREAS; GATE METALS; HIGH-GAIN; INVERTERS; LOW POWER; LOWEST SUPPLY VOLTAGE; NOISE MARGINS; ORGANIC DEVICES; ORGANIC INTEGRATED CIRCUITS; ORGANIC THIN FILM TRANSISTORS; PENTACENES; RAIL-TO-RAIL; RING OSCILLATOR; ROOM TEMPERATURE; TRANSFER CURVES;

DIGITAL INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC); PLATINUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 78049264356     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2072550     Document Type: Article

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