Effects of Al concentration on microstructural characteristics and electrical properties of Al-doped ZnO thin films on Si substrates by atomic layer deposition

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 7, 2012, Pages 5598-5603

  Lee, Ju Ho ^a   Lee, Jae Won ^b   Hwang, Sooyeon ^a   Kim, Sang Yun ^a   Cho, Hyung Koun ^c   Lee, Jeong Yong ^a   Park, Jin Seong ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Dankook University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

AlZnO; Microstructure; Transmission Electron Microscopy; ZnO

Indexed keywords

AFM; AL-CONCENTRATION; AL-DOPED ZNO; AL-DOPING; ALZNO; ATOMIC LAYER; CRYSTALLINITIES; HALL MEASUREMENTS; MICROSTRUCTURAL CHARACTERISTICS; NANO-SIZED; NATIVE OXIDE LAYER; SI (001) SUBSTRATE; SI SUBSTRATES; SOLUBILITY LIMITS; XRD; ZNO;

ALUMINUM; ATOMIC LAYER DEPOSITION; MICROSTRUCTURE; SILICON; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84865108022     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6277     Document Type: Article

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