Characteristics of Al doped ZnO co-sputtered InZnO anode films prepared by direct current magnetron sputtering for organic light-emitting diodes

Thin Solid Films

Volumn 516, Issue 21, 2008, Pages 7866-7870

  Bae, Jung Hyeok ^a   Kim, Han Ki ^a  

^a Kumoh National Institute of Technology   (South Korea)

Author keywords

Anode; AZO; Co sputtered IZO; Magnetron sputtering; Organic light emitting diodes (OLEDs); Resistivity; Transparency

Indexed keywords

ALUMINA; ALUMINUM; ANODES; CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTRODES; FILM PREPARATION; HELMET MOUNTED DISPLAYS; INDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT METALS; MAGNETRON SPUTTERING; MAGNETRONS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; OPTICAL DESIGN; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE FILMS; OXIDES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

AL-DOPED ZNO; ALUMINUM ZINC OXIDE; AMBIENT ENVIRONMENTS; ANODE; AZO; CO-SPUTTERED IZO; CO-SPUTTERING; DC POWER; DEPTH PROFILING; DIRECT CURRENT MAGNETRON SPUTTERING; HIGH TRANSPARENCY; INDIUM CONTENT; INDIUM-ZINC-OXIDE; J-V-L CHARACTERISTICS; LOW-SUBSTRATE TEMPERATURE; ORGANIC LIGHT EMITTING DIODES (OLEDS); ORGANIC LIGHT-EMITTING DIODES; RESISTIVITY; ROOM TEMPERATURES; TRANSPARENCY; ULTRA-VIOLET;

SPUTTER DEPOSITION;

EID: 49349103082     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.05.035     Document Type: Article

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