Structural characterization of III-V zinc blende compound semiconductors using Monte Carlo simulations

Computational Materials Science

Volumn 65, Issue , 2012, Pages 122-126

  Rathi, Punit ^a   Sikder, Sanjib ^a   Adhikari, Jhumpa ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Abell Tersoff model; Compound semiconductors; Monte Carlo method; Structure

Indexed keywords

BOND ANGLE; COMPOUND SEMICONDUCTORS; III-V COMPOUND SEMICONDUCTOR; LINEAR THERMAL EXPANSION COEFFICIENTS; MONTE CARLO SIMULATION; MONTE CARLO SIMULATIONS; NEAREST NEIGHBOUR; POTENTIAL PARAMETERS; SIMULATION TECHNIQUE; STRUCTURAL CHARACTERIZATION; TETRAHEDRAL STRUCTURES; ZINC BLENDE;

LATTICE CONSTANTS; MOLECULAR DYNAMICS; STRUCTURE (COMPOSITION);

MONTE CARLO METHODS;

EID: 84864756226     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2012.07.006     Document Type: Article

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