Structural characterization of pseudo-binary semiconducting alloys using molecular simulations

Molecular Physics

Volumn 108, Issue 24, 2010, Pages 3405-3415

  Sikder, Sanjib ^a   Rathi, Punit ^a   Adhikari, Jhumpa ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

bond length; Keating model; lattice constant; topological rigidity parameters

Indexed keywords

ANGULAR DEVIATIONS; BOND LENGTH VARIATION; KEATING MODEL; MOLECULAR SIMULATIONS; MONTE CARLO SIMULATION; PSEUDO-BINARIES; RIGIDITY PARAMETERS; SEMICONDUCTING ALLOYS; STRUCTURAL CHARACTERIZATION; TETRAHEDRAL STRUCTURES; TOPOLOGICAL RIGIDITY PARAMETERS; VEGARD'S LAW; VIRTUAL-CRYSTAL MODELS;

BINARY ALLOYS; BOND LENGTH; COMPUTER SIMULATION; LATTICE CONSTANTS; LATTICE MISMATCH; MONTE CARLO METHODS; RIGIDITY;

TOPOLOGY;

EID: 78649557196     PISSN: 00268976     EISSN: 13623028     Source Type: Journal    
DOI: 10.1080/00268976.2010.512572     Document Type: Article

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