Validity of Vegard's rule for the lattice parameter and the stiffness elastic constant ratios of the AlGaAs ternary compound

Solid State Communications

Volumn 108, Issue 8, 1998, Pages 599-603

  De Caro, L ^a   Giannini, C ^a   Tapfer, L ^a   Schonherr H P ^b   Daweritz L ^b   Ploog, K H ^b  

^a Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; EPITAXIAL GROWTH; LATTICE CONSTANTS; POISSON RATIO; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY DIFFRACTION;

ELASTIC STIFFNESS CONSTANT RATIOS; EPILAYERS; HIGH RESOLUTION X RAY DIFFRACTION; VEGARD RULE;

SEMICONDUCTING FILMS;

EID: 0032181031     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00374-3     Document Type: Article

References (26)

1. Bassignana, I.C. and Tan, C.C., J. Appl. Cryst., 22, 1989, 269.
2. Bartels, W.J. and Nijman, W., J. Cryst. Growth, 44, 1978, 518; Hornstra, J. and Bartels, W.J., J. Cryst. Growth, 44, 1978, 513.
3. Bartels, W.J. and Nijman, W., J. Cryst. Growth, 44, 1978, 518; Hornstra, J. and Bartels, W.J., J. Cryst. Growth, 44, 1978, 513.
4. De Caro, L., Giannini, C. and Tapfer, L., J. Appl. Phys., 79, 1996, 4101.
5. Denton, A.R. and Ashcroft, N.W., Phys. Rev., A43, 1991, 3161.
6. Fong, C.Y., Weber, W. and Phillips, J.C., Phys. Rev., B14, 1976, 5387.
7. Mikkelsen, J.C. Jr. and Boyce, J.B., Phys. Rev. Lett., 49, 1982, 1412.
8. Nikulin, A.Y., Stevenson, A.W. and Hashizume, H., Phys. Rev., B53, 1996, 8277.
9. Drigo, A.V., Aydinli, A., Camera, A., Genova, F., Rigo, C., Ferrari, C., Franzosi, P. and Salviati, G., J. Appl. Phys., 66, 1989, 1975.
10. Goorsky, M.S., Kuech, T.F., Tischler, M.A. and Potemski, R.M., Appl. Phys. Lett., 59, 1991, 2269.
11. Tanner, B.K., Turnball, A.G., Stanley, C.R., Kean, A.H. and McElhinney, M., Appl. Phys. Lett., 59, 1991, 2272.
12. Krieger, M., Sigg, H., Herres, N., Bachem, K. and Köhler, K., Appl Phys. Lett., 66, 1995, 682.
13. Solomon, G.S., Kirillov, D., Chui, H.C. and Harris, J.S. Jr., J. Vac. Sci. Technol, B12, 1994, 1078.
14. Bowen, D.K. and Tanner, B.K., High Resolution X-ray Diffractometry and Topography. Taylor & Francis Ltd., London, 1998.
15. Tapfer, L., in III-V Quantum System Research (Edited by K.H. Ploog). Institution of Electrical Engineers, London, 1995.
16. De Caro, L. and Tapfer, L., Phys. Rev., B48, 1993, 2298.
17. Tagliente, M.A., De Caro, L., Tapfer, L., Nötzel, R., Fischer, A. and Ploog, K., Solid-State Electronics, 37, 1994, 747.
18. Khapachev, Y.P. and Chukhovskii, F.N., Sov. Phys. Crystallogr., 34, 1989, 465.
19. Bocchi, C., Ferrari, C., Franzosi, P., Bosacchi, A. and Franchi, S., J. Cryst. Growth, 132, 1993, 427.
20. For the (1 0 0)-oriented heterostructures the condition of zero stress component normal to the free surface leads to equation (1a).
21. Adachi, S., Properties of Aluminum Gallium Arsenide. Short Run Press Ltd., Exeter, 1993.
22. Driscoll, C.M.H., Willoughby, A.F.W., Mullin, J.B. and Straughan, B.W., Inst. Phys. Conf. Ser., 24, 1975, 275.
23. Adachi, S., J. Appl. Phys., 58, 1985, R1.
24. Leavitt, R.P. and Towner, F.J., Phys. Rev., B48, 1993, 9154.
25. The only exceptions are the values of v = 0.275 ±0.01, reported in [9], and v = 0.28 ±0.01 reported in [10].
26. Kashiwagura, N., Kashihara, Y. and Harada, J., Jap. J. Appl. Phys., 25, 1986, 1317.