-
1
-
-
0020193772
-
Semiconducting and other major properties of gallium arsenide
-
J.S. Blakemore. Semiconducting and other major properties of gallium arsenide. J. Appl. Phys., 53(10), R123 (1982).
-
(1982)
J. Appl. Phys
, vol.53
, Issue.10
-
-
Blakemore, J.S.1
-
2
-
-
0000726819
-
New empirical model for the structural properties of silicon
-
J. Tersoff. New empirical model for the structural properties of silicon. Phys. Rev. Lett., 56(6), 632 (1986).
-
(1986)
Phys. Rev. Lett
, vol.56
, Issue.6
, pp. 632
-
-
Tersoff, J.1
-
3
-
-
16444366630
-
New empirical, approach, for the structure and energy of covalent systems
-
J. Tersoff. New empirical, approach, for the structure and energy of covalent systems. Phys. Rev B, 37(12), 6991 (1988).
-
(1988)
Phys. Rev B
, vol.37
, Issue.12
, pp. 6991
-
-
Tersoff, J.1
-
4
-
-
27744577658
-
Modeling of solid state chemistry: Interatomic potentials for multieomponent systems
-
J. Tersoff. Modeling of solid state chemistry: interatomic potentials for multieomponent systems. Phys. Rev. B, 39(8), 5566 (1989).
-
(1989)
Phys. Rev. B
, vol.39
, Issue.8
, pp. 5566
-
-
Tersoff, J.1
-
5
-
-
17744405330
-
Structural and thermodynamic properties of GaN: A molecular dynamics simulation
-
W.H. Moon, J. Hwang. Structural and thermodynamic properties of GaN: a molecular dynamics simulation. Phys. Lett. A, 315, 319 (2003).
-
(2003)
Phys. Lett. A
, vol.315
, pp. 319
-
-
Moon, W.H.1
Hwang, J.2
-
6
-
-
2942739193
-
Prediction of structural and thermodynamic properties of zinc-blende AlN: Molecular dynamics simulation
-
M.B.K. Souraya Goumri-Said, A.E. Merad, H.A. Ghouti Merad. Prediction of structural and thermodynamic properties of zinc-blende AlN: molecular dynamics simulation. Chem. Phys., 302, 135 (2004).
-
(2004)
Chem. Phys
, vol.302
, pp. 135
-
-
Souraya Goumri-Said, M.B.K.1
Merad, A.E.2
Ghouti Merad, H.A.3
-
7
-
-
85045782557
-
Atomistic study of zinc-blende BAs from molecular dynamics
-
1.999
-
F. Benkabou, Z. Chelahi Chikr, H. Aourag, P.J. Becker, M. Certier. Atomistic study of zinc-blende BAs from molecular dynamics. Phys. Lett. A, 252, 319 (1.999).
-
Phys. Lett. A
, vol.252
, pp. 319
-
-
Benkabou, F.1
Chelahi Chikr, Z.2
Aourag, H.3
Becker, P.J.4
Certier, M.5
-
8
-
-
0029307156
-
Molecular dynamics simulation of (1.00) InGaAs/GaAs strained-layer relaxation processes
-
P.A. Ashu, J.H. Jefferson, A.G. Cullis, W.E. Hagston, C.R. Wlhitehouse. Molecular dynamics simulation of (1.00) InGaAs/GaAs strained-layer relaxation processes. J, Cryst. Growth, 150, 176 (1995).
-
(1995)
J, Cryst. Growth
, vol.150
, pp. 176
-
-
Ashu, P.A.1
Jefferson, J.H.2
Cullis, A.G.3
Hagston, W.E.4
Wlhitehouse, C.R.5
-
9
-
-
0034140384
-
Molecular dynamics simulation of III-V compound semiconductor growth with MBE
-
M. Nakamura, H. Fujioka, K. Ono, M. Takeuchi, T. Mitsui, M. Oshima. Molecular dynamics simulation of III-V compound semiconductor growth with MBE. J. Cryst. Growth, 209, 232 (2000).
-
(2000)
J. Cryst. Growth
, vol.209
, pp. 232
-
-
Nakamura, M.1
Fujioka, H.2
Ono, K.3
Takeuchi, M.4
Mitsui, T.5
Oshima, M.6
-
10
-
-
0038412234
-
Properties of gallium, arsenide
-
S.I. Novikova. Properties of gallium, arsenide. Sov, Phys. Solid State, 3, 129 (1961).
-
(1961)
Sov, Phys. Solid State
, vol.3
, pp. 129
-
-
Novikova, S.I.1
-
11
-
-
2942644564
-
Molecular simulation study of miscibility of ternary and quaternary InGaAlN alloys
-
J. Adhikari, D. A. Kofke. Molecular simulation study of miscibility of ternary and quaternary InGaAlN alloys. J. Appl. Phys., 95(11), 6129 (2004).
-
(2004)
J. Appl. Phys
, vol.95
, Issue.11
, pp. 6129
-
-
Adhikari, J.1
Kofke, D.A.2
-
12
-
-
2342514883
-
-
1-xN ternary alloys. J. Appl. Phys., 95(8), 4500 (2004).
-
1-xN ternary alloys. J. Appl. Phys., 95(8), 4500 (2004).
-
-
-
-
13
-
-
0002360821
-
Strain-induced Kirkendall mixing at semiconductor interfaces
-
K. Nordlund, J. Nord, J. Frantz, J. Keinonen. Strain-induced Kirkendall mixing at semiconductor interfaces. Comput. Mater. Sci., 18(3-4), 283 (2000).
-
(2000)
Comput. Mater. Sci
, vol.18
, Issue.3-4
, pp. 283
-
-
Nordlund, K.1
Nord, J.2
Frantz, J.3
Keinonen, J.4
-
14
-
-
0039209282
-
Structural and electronic properties of narrowband-gap semiconductors: InP, InAs, and InSb
-
S. Massidda, A. Continenza, A.J. Freeman, TM. de Pascale, F. Meloni, M. Serra. Structural and electronic properties of narrowband-gap semiconductors: InP, InAs, and InSb. Phys. Rev B, 41(17), 12079 (1990).
-
(1990)
Phys. Rev B
, vol.41
, Issue.17
, pp. 12079
-
-
Massidda, S.1
Continenza, A.2
Freeman, A.J.3
de Pascale, T.M.4
Meloni, F.5
Serra, M.6
-
15
-
-
0000107972
-
Thermal expansions from 2 to 40°K of Ge, Si, and four III-V compounds
-
R.W. Sparks, A. Swenson. Thermal expansions from 2 to 40°K of Ge, Si, and four III-V compounds. Phys. Rev., 163, 779 (1967).
-
(1967)
Phys. Rev
, vol.163
, pp. 779
-
-
Sparks, R.W.1
Swenson, A.2
-
16
-
-
3643123105
-
Atomic-scale structure of random, solid solutions: Extended X-ray-absorption fine-structure study of GaIxInxAs
-
J.C. Mikkelsen, B. Boyce. Atomic-scale structure of random, solid solutions: extended X-ray-absorption fine-structure study of GaIxInxAs. Phys. Rev Lett., 49(19), 1412 (1982).
-
(1982)
Phys. Rev Lett
, vol.49
, Issue.19
, pp. 1412
-
-
Mikkelsen, J.C.1
Boyce, B.2
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