Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

Thin Solid Films

Volumn 520, Issue 21, 2012, Pages 6589-6594

  Lim, Ju Young ^a,b,c   Song, Jin Dong ^a   Yang, Hae Suk ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Chung Ang University   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

Defects; Hall devices; InSb; Interfaces; Molecular beam epitaxy; Nanostructures; Raman

Indexed keywords

GAAS; GAAS SUBSTRATES; HALL DEVICES; INAS QUANTUM DOTS; INSB; INTERMEDIATE LAYERS; RAMAN; SUBSTRATE TEMPERATURE; TRANSPORT QUALITY;

ANTIMONY; DEFECTS; ELECTRON MOBILITY; GALLIUM ARSENIDE; INDIUM ARSENIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

INDIUM ANTIMONIDES;

EID: 84864752630     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.06.077     Document Type: Article

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