High-quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and InxAl1-xSb step-graded buffers

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 615-619

  Sato, T ^a   Akabori, M ^a   Yamada, S ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

GaAs (001) substrate; InAlSb step graded buffer; InSb; Mobility

Indexed keywords

ELECTRON MOBILITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES; SURFACE ROUGHNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GAAS (001) SUBSTRATE; HALL MOBILITY; INALSB STEP GRADED BUFFER; INSB;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1642287985     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.088     Document Type: Conference Paper

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