Transport properties of Sn-doped InSb thin films and applications to Hall element

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 560-564

  Okamoto, A ^a   Shibasaki, I ^a  

^a ASAHI KASEI CORPORATION   (Japan)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting indium antimonide; B3. Hall elements

Indexed keywords

ELECTRON MOBILITY; HALL EFFECT; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SENSORS; SINGLE CRYSTALS; THERMAL EFFECTS; TIN; TRANSPORT PROPERTIES;

HALL ELEMENTS;

THIN FILMS;

EID: 0037380417     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02448-X     Document Type: Conference Paper

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