Structural investigation of gallium oxide (β-Ga2O3) nanowires grown by arc-discharge

Journal of Crystal Growth

Volumn 220, Issue 4, 2000, Pages 494-500

  Park, Gyeong Su ^a   Choi, Won Bong ^a   Kim, Jong Min ^a   Choi, Young Chul ^b   Lee, Young Hee ^b   Lim, Chang Bin ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b J   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC ARCS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MULTICHANNEL X-RAY DIFFRACTOMETRY (MC-XRD); NANOWIRES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034506273     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00609-6     Document Type: Article

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