Impact of V/III flux ratio and Si-doping concentration on grown by metalorganic chemical-vapor deposition on sapphire substrate

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2002, Pages 172-176

  Tan, Lay Theng ^a   Chen, Peng ^b   Chua, Soo Jin ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION GENERATION; ELECTRON CONCENTRATION; EQUILIBRIUM CONDITIONS; FLUX RATIO; GROWTH REGIME; METAL-ORGANIC; SAPPHIRE SUBSTRATES; SI-DOPING; STRUCTURAL AND ELECTRICAL PROPERTIES;

EDGE DISLOCATIONS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; SAPPHIRE; SILICON; SURFACE ROUGHNESS; VAPORS;

SEMICONDUCTOR DOPING;

EID: 84864685772     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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