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Applied Physics Letters

Volumn 101, Issue 5, 2012, Pages

Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

(4) Fan, Yang Shun a Liu, Po Tsun a Teng, Li Feng a Hsu, Ching Hui a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLES; CONDUCTION PROCESS; CURRENT TRANSPORT; ELECTRICAL CONDUCTION MECHANISMS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NON-VOLATILE MEMORY APPLICATION; OHMIC CONDUCTION; RADIO-FREQUENCY-MAGNETRON SPUTTERING; READ DISTURB; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION CHARACTERISTICS; ROOM TEMPERATURE; SPACE-CHARGE-LIMITED; STRESS CONDITION; SWITCHING CYCLES; ZINC TIN OXIDE;

NONVOLATILE STORAGE; SWITCHING SYSTEMS; TIN; TIN OXIDES; ZINC;

ALUMINUM;

EID: 84864676013 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4742737 Document Type: Article

Times cited : (44)

References (16)

1
- 43549126477
- 10.1016/S1369-7021(08)70119-6
- A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6
- (2008) Mater. Today , vol.11 , pp. 28
- Sawa, A.¹

2
- 78649447784
- 10.1109/LED.2010.2074177
- Y. Wu, B. Lee, and H. P. Wong, IEEE Electron Device Lett. 31, 1449 (2010). 10.1109/LED.2010.2074177
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1449
- Wu, Y.¹ Lee, B.² Wong, H.P.³

3
- 67349267736
- I, 10.1109/TED.2009.2012522
- S. Kim, H. Moon, D. Gupta, S. Yoo, and Y. K. Choi, I EEE Trans. Electron Devices 56, 696 (2009). 10.1109/TED.2009.2012522
- (2009) EEE Trans. Electron Devices , vol.56 , pp. 696
- Kim, S.¹ Moon, H.² Gupta, D.³ Yoo, S.⁴ Choi, Y.K.⁵

4
- 67949097936
- H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, IEDM Tech. Dig. 2008, 297.
- IEDM Tech. Dig. , vol.2008 , pp. 297
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Chen, Y.S.⁴ Wang, C.C.⁵ Tzeng, P.J.⁶ Lin, C.H.⁷ Chen, F.⁸ Lien, C.H.⁹ Tsai, M.J.¹⁰

5
- 80053563016
- 10.1109/LED.2011.2162311
- Z. Q. Wang, H. Y. Xu, X. H. Li, X. T. Zhang, Y. X. Liu, and Y. C. Liu, IEEE Electron Device Lett. 32, 1442 (2011). 10.1109/LED.2011.2162311
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 1442
- Wang, Z.Q.¹ Xu, H.Y.² Li, X.H.³ Zhang, X.T.⁴ Liu, Y.X.⁵ Liu, Y.C.⁶

6
- 77955741062
- 10.1063/1.3479527
- C. H. Kim, Y. H. Jang, H. J. Hwang, C. H. Song, Y. S. Yang, Appl. Phys. Lett. 97, 062109 (2010). 10.1063/1.3479527
- (2010) Appl. Phys. Lett. , vol.97 , pp. 062109
- Kim, C.H.¹ Jang, Y.H.² Hwang, H.J.³ Song, C.H.⁴ Yang, Y.S.⁵

7
- 80053302244
- P. T. Liu, L. F. Teng, Y. S. Fan, C. S. Fuh, Y. T. Chou, W. Y. Wang, and H. P. D. Shieh, in Proceedings of the 16th OptoeElectronics and Communications Conference, Kaohsiung, Taiwan (2011), pp. 91-92.
- (2011) Proceedings of the 16th OptoeElectronics and Communications Conference, Kaohsiung, Taiwan , pp. 91-92
- Liu, P.T.¹ Teng, L.F.² Fan, Y.S.³ Fuh, C.S.⁴ Chou, Y.T.⁵ Wang, W.Y.⁶ Shieh, H.P.D.⁷

8
- 84864666837
- Padova, Italy
- J. C. Lee and J. Y. Jeong, International Conference on Integrated Circuit Design and Technology ICICDT 06, Padova, Italy (2006), pp. 1-4.
- (2006) International Conference on Integrated Circuit Design and Technology ICICDT 06 , pp. 1-4
- Lee, J.C.¹ Jeong, J.Y.²

9
- 65449156821
- 10.1109/MSPEC.2008.4531464
- S. K. Moore, IEEE Spectrum 45 (3), 60 (2008). 10.1109/MSPEC.2008.4531464
- (2008) IEEE Spectrum , vol.45 , Issue.3 , pp. 60
- Moore, S.K.¹

10
- 71949116567
- 10.1063/1.3272016
- P. T. Liu, Y. T. Chou, and L. F. Teng, Appl. Phys. Lett. 95, 233504 (2009). 10.1063/1.3272016
- (2009) Appl. Phys. Lett. , vol.95 , pp. 233504
- Liu, P.T.¹ Chou, Y.T.² Teng, L.F.³

11
- 79951480696
- 10.1063/1.3551537
- P. T. Liu, Y. T. Chou, L. F. Teng, F. H. Li, and H. P. Shieh, Appl. Phys. Lett. 98, 052102 (2011). 10.1063/1.3551537
- (2011) Appl. Phys. Lett. , vol.98 , pp. 052102
- Liu, P.T.¹ Chou, Y.T.² Teng, L.F.³ Li, F.H.⁴ Shieh, H.P.⁵

12
- 53649092548
- 10.1063/1.2998612
- D. H. Cho, S. Yang, C. Byun, J. Shin, M. K. Ryu, S. H. Ko Park, C. S. Hwang, S. M. Chung, W. S. Cheong, S. M. Yoon, and H. Y. Chu, Appl. Phys. Lett. 93, 142111 (2008). 10.1063/1.2998612
- (2008) Appl. Phys. Lett. , vol.93 , pp. 142111
- Cho, D.H.¹ Yang, S.² Byun, C.³ Shin, J.⁴ Ryu, M.K.⁵ Ko Park, S.H.⁶ Hwang, C.S.⁷ Chung, S.M.⁸ Cheong, W.S.⁹ Yoon, S.M.¹⁰ Chu, H.Y.¹¹

13
- 70349503989
- 10.1063/1.3231872
- S. Y. Wang, D. Y. Lee, T. Y. Tseng, and C. Y. Lin, Appl. Phys. Lett. 95, 112904 (2009). 10.1063/1.3231872
- (2009) Appl. Phys. Lett. , vol.95 , pp. 112904
- Wang, S.Y.¹ Lee, D.Y.² Tseng, T.Y.³ Lin, C.Y.⁴

14
- 68249119187
- 10.1063/1.3191674
- M. K. Yang, J. W. Park, T. K. Ko, and J. K. Lee, Appl. Phys. Lett. 95, 042105 (2009). 10.1063/1.3191674
- (2009) Appl. Phys. Lett. , vol.95 , pp. 042105
- Yang, M.K.¹ Park, J.W.² Ko, T.K.³ Lee, J.K.⁴

15
- 79151482768
- 10.1109/LED.2010.2091489
- S. G. Park, M. K. Blanka, and Y. Nishi, IEEE Electron Device Lett. 32, 197 (2011). 10.1109/LED.2010.2091489
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 197
- Park, S.G.¹ Blanka, M.K.² Nishi, Y.³

16
- 36048964246
- 10.1063/1.2749846
- K. M. Kim, B. J. Choi, Y. C. Shin, S. Choi, and C. S. Hwang, Appl. Phys. Lett. 91, 012907 (2007). 10.1063/1.2749846
- (2007) Appl. Phys. Lett. , vol.91 , pp. 012907
- Kim, K.M.¹ Choi, B.J.² Shin, Y.C.³ Choi, S.⁴ Hwang, C.S.⁵

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