Impact of bottom electrode and Srx Tiy Oz film formation on physical and electrical properties of metal-insulator-metal capacitors

Applied Physics Letters

Volumn 98, Issue 18, 2011, Pages

  Pawlak, M A ^a   Kaczer, B ^a   Kim, M S ^a   Popovici, M ^a   Swerts, J ^a   Wang, W C ^a,b   Opsomer, K ^a   Favia, P ^a   Tomida, K ^a   Belmonte, A ^a   Govoreanu, B ^a   Vrancken, C ^a   Demeurisse, C ^a   Bender, H ^a   Afanas'Ev, V V ^a,b   Debusschere, I ^a   Altimime, L ^a   Kittl, J A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; DIELECTRIC CONSTANTS; DIELECTRIC STACK; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; FILM FORMATIONS; LATTICE PARAMETERS; LOW LEAKAGE; METAL-INSULATOR-METAL CAPACITORS; OXYGEN SCAVENGING; SMALL GRAIN SIZE; STO FILMS; TI CONTENT; TIN ELECTRODES; TRAP DENSITY;

ATOMIC LAYER DEPOSITION; CRYSTALLIZATION; DIELECTRIC FILMS; ELECTRIC PROPERTIES; ELECTRODES; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; PEROVSKITE; SCAVENGING; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM NITRIDE;

ELECTROLYTIC CAPACITORS;

EID: 79957440090     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3584022     Document Type: Article

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