Electronic properties calculation of Ge 1-x-ySi xSn y ternary alloy and nanostructure

Journal of Non-Crystalline Solids

Volumn 358, Issue 17, 2012, Pages 2096-2098

  Moontragoon, Pairot ^a   Pengpit, Pichitpon ^a   Burinprakhon, Thanusit ^a   Maensiri, Santi ^b   Vukmirovic, Nenad ^c   Ikonic, Zoran ^d   Harrison, Paul ^d  

^a Khon Kaen University   (Thailand)

^b SURANAREE UNIVERSITY OF TECHNOLOGY   (Thailand)

^c UNIVERSITY OF BELGRADE   (Serbia)

^d UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Direct band gap semiconductor; SiGeSn alloys; Silicon photonic devices

Indexed keywords

ALLOY COMPOSITIONS; ARBITRARY COMPOSITIONS; DIRECT BAND GAP; DIRECT BAND GAP SEMICONDUCTORS; EMPIRICAL PSEUDO-POTENTIAL; HAMILTONIAN MODELS; INDIRECT BAND GAP; INFRARED RANGE; INTERBAND LASERS; OPTOELECTRONIC APPLICATIONS; PARAMETER SPACES; PLANE WAVE METHODS; SILICON PHOTONIC DEVICES; STRAIN-FREE; TUNABILITIES; VIRTUAL CRYSTAL APPROXIMATION;

BINARY ALLOYS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GERMANIUM; PHOTONIC DEVICES; QUANTUM WELL LASERS; SILICON; TERNARY ALLOYS; TIN;

TIN ALLOYS;

EID: 84864253867     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2012.01.025     Document Type: Conference Paper

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