Band structures and optical gain of direct-bandgap tensile strained Ge/Ge1-X-YSiXSnY type I quantum wells

2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings

Volumn , Issue , 2010, Pages 131-133

  Fan, W J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Band structure; Ge; K.p method; Optical gain; Quantum well; Si

Indexed keywords

BAND GAPS; HOLE ENERGY; K.P METHOD; PEAK POSITION; QUANTUM WELL;

BAND STRUCTURE; ELECTRIC FIELD MEASUREMENT; GERMANIUM; OPTICAL GAIN; SILICON; THERMOELECTRIC EQUIPMENT; TIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955302855     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEDSA.2010.5503089     Document Type: Conference Paper

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