Band profile around grain boundary of Cu(InGa)Se2 solar cell material characterized by scanning probe microscopy

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 2512-2515

  Takihara, M ^a   Minemoto, T ^b   Wakisaka, Y ^b   Takahashi, T ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BAND GAPS; BUILT-IN POTENTIAL; CIGS SOLAR CELLS; CIGS THIN FILMS; CONDUCTION BAND EDGE; GA CONTENT; IN-FIELD; KELVIN PROBE FORCE MICROSCOPY; PHOTOCARRIER; PHOTOGENERATED ELECTRONS; SCANNING TUNNELING SPECTROSCOPY; SOLAR CELL MATERIALS;

ELECTRON MOBILITY; GALLIUM; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; PHOTOVOLTAIC EFFECTS; PROBES; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SOLAR CELLS; SPECTROSCOPY;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 78650131072     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614681     Document Type: Conference Paper

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