Hydrogen-saturated silicon nanowires heavily doped with interstitial and substitutional transition metals

Journal of Physical Chemistry C

Volumn 116, Issue 29, 2012, Pages 15713-15722

  Durgun, E ^a,b   Bilc, D I ^a,c   Ciraci, S ^d   Ghosez, Ph ^a  

^a UNIVERSITY OF LIÈGE   (Belgium)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c TECHNICAL UNIVERSITY OF CLUJ NAPOCA   (Romania)

^d BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE CONFIGURATIONS; DILUTE MAGNETIC SEMICONDUCTORS; ELECTRONIC AND MAGNETIC PROPERTIES; FUNCTIONALIZED; HALF-METALLIC BEHAVIOR; HEAVILY DOPED; MAGNETIC GROUND STATE; NANO SCALE; NON-MAGNETIC SEMICONDUCTORS; SILICON NANOWIRES; SPINTRONIC DEVICE; SURFACE EFFECT; SYSTEMATIC STUDY;

HYDROGEN; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; NANOWIRES; TRANSITION METALS;

SEMICONDUCTOR DOPING;

EID: 84864213044     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp303142u     Document Type: Article

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