Characterization of GaSb/AlGaSb multi-quantum-well structures grown on Si(011) substrates

Japanese Journal of Applied Physics

Volumn 47, Issue 1 PART 2, 2008, Pages 580-583

  Toyota, Hideyuki ^a   Sasaki, Tomonori ^a   Nakamura, Shin Ichi ^b   Jinbo, Yoshio ^a   Uchitomi, Naotaka ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

GaSb; Molecular beam epitaxy; Multi quantum well; Superlattice buffer layer

Indexed keywords

BUFFER LAYERS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT EMISSION; LUMINESCENCE; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; SILICON; SONOLUMINESCENCE; SUBSTRATES; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

ATOMIC FORCES; GASB; HIGH-RESOLUTION; LOW TEMPERATURES; MOLECULAR-BEAM EPITAXIES; MQW STRUCTURES; MULTI-QUANTUM-WELL; PL EMISSION ENERGIES; PL EMISSIONS; POTENTIAL MODELS; REFERENCE SAMPLES; SQUARE WELLS; WELL WIDTHS; X-RAY DIFFRACTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 54249109508     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.580     Document Type: Article

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