Defects in hexagonal-AIN sheets by first-principles calculations

European Physical Journal B

Volumn 85, Issue 1, 2012, Pages

  De Almeida, E F ^a   De Brito Mota, F ^a   De Castilho, C M C ^a,b   Kakanakova Georgieva, A ^c   Gueorguiev, G K ^c  

^a Campus Universitrio da Federaço Ondina   (Brazil)

^b FEDERAL UNIVERSITY OF BAHIA   (Brazil)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BOND LENGTH; CALCULATIONS; DEFECTS; ELECTRONIC PROPERTIES; III-V SEMICONDUCTORS; IMPURITIES; NITROGEN COMPOUNDS; SILICON; ZINC SULFIDE;

ANTI-SITE DEFECT; COHESIVE ENERGIES; DEFECT AND IMPURITIES; FIRST PRINCIPLE CALCULATIONS; FORMATION ENERGIES; MODELLING SYSTEMS; STRUCTURAL AND ELECTRONIC PROPERTIES; SUPER CELL; SYNTHESIZABILITY; THEORETICAL CALCULATIONS;

ALUMINUM NITRIDE;

EID: 84863731329     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2011-20538-6     Document Type: Article

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