An investigation of performance limits of conventional and tunneling graphene-based transistors

Journal of Computational Electronics

Volumn 8, Issue 3-4, 2009, Pages 441-450

  Grassi, R ^a   Gnudi, A ^a   Gnani, E ^a   Reggiani, S ^a   Baccarani, G ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Carbon electronics; Graphene nanoribbons; Nanoelectronic devices; Tunneling FET

Indexed keywords

FIELD EFFECT TRANSISTORS; GRAPHENE;

DEVICE OPTIMIZATION; DIGITAL APPLICATIONS; GRAPHENE NANORIBBONS; NANOELECTRONIC DEVICES; SIMULATION STUDIES; SUBTHRESHOLD SLOPE; TUNNELING FET; TUNNELING MECHANISM;

NANORIBBONS;

EID: 84863675697     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-009-0282-2     Document Type: Article

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