SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 101, Issue 1, 2012, Pages

Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films

(6) Kuo, C C a Lin, B H a,b Yang, Song a Liu, W R b Hsieh, W F a Hsu, C H a,b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD BANDS; DIFFRACTION PEAKS; INTERFACE DEFECTS; LOW STRAINS; LOW TEMPERATURES; M-PLANE; POLARIZED PHOTOLUMINESCENCE; SURFACE BOUNDARIES; TRAPPED EXCITON; ZNO; ZNO FILMS;

EXCITONS; METALLIC FILMS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SAPPHIRE; X RAY DIFFRACTION; ZINC OXIDE;

INTERFACES (MATERIALS);

EID: 84863637951 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4732140 Document Type: Article

Times cited : (10)

References (21)

1
- 33751580327
- Directional edge-emitting UV random laser diodes
- DOI 10.1063/1.2397551
- E. S. P. Leong, S. F. Yu, and S. P. Lau, Appl. Phys. Lett. 89, 221109 (2006). 10.1063/1.2397551 (Pubitemid 44847511)
- (2006) Applied Physics Letters , vol.89 , Issue.22 , pp. 221109
- Leong, E.S.P.¹ Yu, S.F.² Lau, S.P.³

2
- 55849088744
- 10.1063/1.3012579
- S. Chu, M. Olmedo, Z. Yang, J. Kong, and J. Liu, Appl. Phys. Lett. 93, 181106 (2008). 10.1063/1.3012579
- (2008) Appl. Phys. Lett. , vol.93 , pp. 181106
- Chu, S.¹ Olmedo, M.² Yang, Z.³ Kong, J.⁴ Liu, J.⁵

3
- 33750513795
- UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering
- DOI 10.1002/adma.200502633
- J. H. Lim, C. K. Kang, K. K. Kim, I.-K. Park, D. K. Hwang, and S. J. Park, Adv. Mater. 18, 2720 (2006). 10.1002/adma.200502633 (Pubitemid 44664109)
- (2006) Advanced Materials , vol.18 , Issue.20 , pp. 2720-2724
- Lim, J.-H.¹ Kong, C.-K.² Kim, K.-K.³ Park, I.-K.⁴ Hwang, D.-K.⁵ Park, S.-J.⁶

4
- 19944421735
- Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
- DOI 10.1038/nmat1284
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nat. Mater. 4, 42 (2005). 10.1038/nmat1284 (Pubitemid 40021000)
- (2005) Nature Materials , vol.4 , Issue.1 , pp. 42-45
- Tsukazaki, A.¹ Ohtomo, A.² Onuma, T.³ Ohtani, M.⁴ Makino, T.⁵ Sumiya, M.⁶ Ohtani, K.⁷ Chichibu, S.F.⁸ Fuke, S.⁹ Segawa, Y.¹⁰ Ohno, H.¹¹ Koinuma, H.¹² Kawasaki, M.¹³

5
- 17144391911
- Optical properties of excitons in ZnO-based quantum well heterostructures
- DOI 10.1088/0268-1242/20/4/010
- T. Makino, Y. Segawa, M. Kawasaki, and H. Koinuma, Semicond. Sci. Technol. 20, S78 (2005). 10.1088/0268-1242/20/4/010 (Pubitemid 40509526)
- (2005) Semiconductor Science and Technology , vol.20 , Issue.4
- Makino, T.¹ Segawa, Y.² Kawasaki, M.³ Koinuma, H.⁴

6
- 0034710677
- Nirtride semiconductors free of electrostatic fields for efficient white light-emitting diodes
- DOI 10.1038/35022529
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 406, 865 (2000). 10.1038/35022529 (Pubitemid 30664256)
- (2000) Nature , vol.406 , Issue.6798 , pp. 865-868
- Waltereit, P.¹ Brandt, O.² Trampert, A.³ Grahn, H.T.⁴ Monniger, J.⁵ Ramsteiner, M.⁶ Relche, M.⁷ Ploog, K.H.⁸

7
- 29644435687
- Internal electric field in wurtzite ZnO Zn0.78Mg0.22O quantum wells
- DOI 10.1103/PhysRevB.72.241305, 241305
- C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Tesseire-Doninelli, B. Vinter, and C. Deparis, Phys. Rev. B 72, 241305 (2005). 10.1103/PhysRevB.72.241305 (Pubitemid 43022555)
- (2005) Physical Review B - Condensed Matter and Materials Physics , vol.72 , Issue.24 , pp. 1-4
- Morhain, C.¹ Bretagnon, T.² Lefebvre, P.³ Tang, X.⁴ Valvin, P.⁵ Guillet, T.⁶ Gil, B.⁷ Taliercio, T.⁸ Teisseire-Doninelli, M.⁹ Vinter, B.¹⁰ Deparis, C.¹¹

8
- 0036147401
- 10.1103/PhysRevB.65.014111
- Y. Noel, C. M. Zocovich-Wilson, B. Civalleri, Ph. D'Arco, and R. Doversi, Phys. Rev. B 65, 014111 (2001). 10.1103/PhysRevB.65.014111
- (2001) Phys. Rev. B , vol.65 , pp. 014111
- Noel, Y.¹ Zocovich-Wilson, C.M.² Civalleri, B.³ D'Arco, Ph.⁴ Doversi, R.⁵

9
- 49149085082
- 10.1063/1.2965801
- G. Saraf, Y. Lu, and T. Siegrist, Appl. Phys. Lett. 93, 041903 (2008). 10.1063/1.2965801
- (2008) Appl. Phys. Lett. , vol.93 , pp. 041903
- Saraf, G.¹ Lu, Y.² Siegrist, T.³

10
- 67650508380
- 10.1063/1.3159470
- C. C. Kuo, W.-R. Liu, W. F. Hsieh, C.-H. Hsu, H. C. Hsu, and L. C. Chen, Appl. Phys. Lett. 95, 011905 (2009). 10.1063/1.3159470
- (2009) Appl. Phys. Lett. , vol.95 , pp. 011905
- Kuo, C.C.¹ Liu, W.-R.² Hsieh, W.F.³ Hsu, C.-H.⁴ Hsu, H.C.⁵ Chen, L.C.⁶

11
- 1542574251
- 10.1063/1.1646749
- T. Koida, S. F. Chichibu, A. Uedono, T. Sota, A. Tsukazaki, and M. Kawasaki, Appl. Phys. Lett. 84, 1079 (2004). 10.1063/1.1646749
- (2004) Appl. Phys. Lett. , vol.84 , pp. 1079
- Koida, T.¹ Chichibu, S.F.² Uedono, A.³ Sota, T.⁴ Tsukazaki, A.⁵ Kawasaki, M.⁶

12
- 77956201141
- 10.1116/1.3119682
- J.-H. Kim, S. K. Han, S. I. Hong, S.-K. Hong, J. W. Lee, J. Y. Lee, J.-H. Song, J. S. Park, and T. Yao, J. Vac. Sci. Technol. B 27, 1625 (2009). 10.1116/1.3119682
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1625
- Kim, J.-H.¹ Han, S.K.² Hong, S.I.³ Hong, S.-K.⁴ Lee, J.W.⁵ Lee, J.Y.⁶ Song, J.-H.⁷ Park, J.S.⁸ Yao, T.⁹

13
- 71649104176
- 10.1016/j.jcrysgro.2009.10.023
- J. W. Lee, J.-H. Kim, S. K. Han, S.-K. Hong, J. Y. Lee, S. I. Hong, and T. Yao, J. Cryst. Growth 312, 238 (2010). 10.1016/j.jcrysgro.2009.10.023
- (2010) J. Cryst. Growth , vol.312 , pp. 238
- Lee, J.W.¹ Kim, J.-H.² Han, S.K.³ Hong, S.-K.⁴ Lee, J.Y.⁵ Hong, S.I.⁶ Yao, T.⁷

14
- 54049112245
- 10.1063/1.2996248
- J.-M. Chauveau, P. Vennéguès, M. Laügt, C. Deparis, J. Zuniga-Perez, and C. Morhain, J. Appl. Phys. 104, 073535 (2008). 10.1063/1.2996248
- (2008) J. Appl. Phys. , vol.104 , pp. 073535
- Chauveau, J.-M.¹ Vennéguès, P.² Laügt, M.³ Deparis, C.⁴ Zuniga-Perez, J.⁵ Morhain, C.⁶

15
- 79955133883
- 10.1116/1.3539046
- W.-L. Wang, C.-Y. Peng, Y.-T. Ho, S.-C. Chuang, and L. Chang, J. Vac. Sci. Technol. A 29, 031001 (2011). 10.1116/1.3539046
- (2011) J. Vac. Sci. Technol. A , vol.29 , pp. 031001
- Wang, W.-L.¹ Peng, C.-Y.² Ho, Y.-T.³ Chuang, S.-C.⁴ Chang, L.⁵

16
- 77955279327
- 10.1016/j.jcrysgro.2010.04.056
- S. K. Han, J.-H. Kim, S.-K. Hong, J.-H. Song, J.-H. Song, J. W. Lee, J. Y. Lee, S. I. Hong, and T. Yao, J. Cryst. Growth 312, 2196 (2010). 10.1016/j.jcrysgro.2010.04.056
- (2010) J. Cryst. Growth , vol.312 , pp. 2196
- Han, S.K.¹ Kim, J.-H.² Hong, S.-K.³ Song, J.-H.⁴ Song, J.-H.⁵ Lee, J.W.⁶ Lee, J.Y.⁷ Hong, S.I.⁸ Yao, T.⁹

17
- 84863160998
- 10.1039/C2CE06218F
- W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu, W. F. Hsieh, W. C. Lee, M. Hong, and J. Kwo, CrystEngComm 14, 1665 (2012). 10.1039/C2CE06218F
- (2012) CrystEngComm , vol.14 , pp. 1665
- Liu, W.-R.¹ Lin, B.H.² Yang, S.³ Kuo, C.C.⁴ Li, Y.-H.⁵ Hsu, C.-H.⁶ Hsieh, W.F.⁷ Lee, W.C.⁸ Hong, M.⁹ Kwo, J.¹⁰

18
- 12844276699
- Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer
- DOI 10.1063/1.1832734
- T. Onuma, S. F. Chichibu, A. Uedono, Y. Z. Yoo, T. Chikyow, T. Sota, M. Kawasaki, and H. Koinuma, Appl. Phys. Lett. 85, 5586 (2004). 10.1063/1.1832734 (Pubitemid 40162533)
- (2004) Applied Physics Letters , vol.85 , Issue.23 , pp. 5586-5588
- Onuma, T.¹ Chichibu, S.F.² Uedono, A.³ Yoo, Y.-Z.⁴ Chikyow, T.⁵ Sota, T.⁶ Kawasaki, M.⁷ Koinuma, H.⁸

19
- 79952832005
- 10.1039/C0CE00844C
- L. W. Sun, H. P. He, C. Liu, Y. F. Lu, and Z. Ye, CrystEngComm 13, 2439 (2011). 10.1039/C0CE00844C
- (2011) CrystEngComm , vol.13 , pp. 2439
- Sun, L.W.¹ He, H.P.² Liu, C.³ Lu, Y.F.⁴ Ye, Z.⁵

20
- 41549146671
- 10.1103/PhysRevB.77.125215
- M. Schirra, R. Schneider, A. Reiser, G. M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, C. E. Krill, K. Thonke, and R. Sauer, Phys. Rev. B 77, 125215 (2008). 10.1103/PhysRevB.77.125215
- (2008) Phys. Rev. B , vol.77 , pp. 125215
- Schirra, M.¹ Schneider, R.² Reiser, A.³ Prinz, G.M.⁴ Feneberg, M.⁵ Biskupek, J.⁶ Kaiser, U.⁷ Krill, C.E.⁸ Thonke, K.⁹ Sauer, R.¹⁰

21
- 76449110211
- 10.1063/1.3294327
- J. S. Reparaz, F. Güell, M. R. Wagner, A. Hoffmann, A. Cornet, and J. R. Morante, Appl. Phys. Lett. 96, 053105 (2010). 10.1063/1.3294327
- (2010) Appl. Phys. Lett. , vol.96 , pp. 053105
- Reparaz, J.S.¹ Güell, F.² Wagner, M.R.³ Hoffmann, A.⁴ Cornet, A.⁵ Morante, J.R.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.