Deposition of nanocrystalline thin TiO 2 films for MOS capacitors using Sol-Gel spin method with Pt and Al top electrodes

Solid-State Electronics

Volumn 76, Issue , 2012, Pages 71-76

  Rathee, Davinder ^a   Kumar, Mukesh ^b   Arya, Sandeep K ^a  

^a GURU JAMBHESHWAR UNIVERSITY OF SCIENCE AND TECHNOLOGY   (India)

^b KURUKSHETRA UNIVERSITY   (India)

Author keywords

C V analysis; Raman spectra; Sol Gel spin coating; TiO 2; XRD

Indexed keywords

ACTIVE MODE; AFM; ANATASE PHASE; ATOMIC FORCE MICROSCOPE (AFM); C-V ANALYSIS; CAPACITANCE VOLTAGE MEASUREMENTS; CRYSTALLINITIES; DEPOSITED FILMS; DIFFRACTION PEAKS; ELECTRICAL CHARACTERISTIC; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; HIGH TEMPERATURE; METAL-OXIDE- SEMICONDUCTORCAPACITORS; NANOCRYSTALLINE TITANIUM DIOXIDE; NANOCRYSTALLINES; PROCESS PARAMETERS; RAMAN PEAK; SI SUBSTRATES; SOL-GEL SPIN COATING; SOL-GEL SPIN COATING METHOD; STRUCTURE AND PROPERTIES; STYLUS PROFILOMETER; TIO; TITANIA; XRD; XRD PATTERNS;

ATOMIC FORCE MICROSCOPY; COATINGS; ELECTROLYTIC CAPACITORS; MOS CAPACITORS; PLATINUM; RAMAN SCATTERING; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOL-GELS; SPECTRUM ANALYSIS; THIN FILMS; TITANIUM; VAPOR DEPOSITION; X RAY DIFFRACTION;

TITANIUM DIOXIDE;

EID: 84863536700     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.04.041     Document Type: Article

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