Modeling and theoretical efficiency of a silicon nanowire based thermoelectric junction with area enhancement

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Seong, M ^a   Sadhu, J S ^a   Ma, J ^a   Ghossoub, M G ^a   Sinha, S ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE THERMAL CONDUCTIVITY; ELECTRICAL CONTACTS; FLOWTHROUGH; FREQUENCY DEPENDENT; HEAT EXCHANGE; LOW RESISTIVITY; NEAR ROOM TEMPERATURE; P-N JUNCTION; PEAK POWER; PHONON-BOUNDARY SCATTERING; ROUGH SURFACES; ROUGHNESS SCALE; SILICON NANOWIRES; SOURCE AND SINK; TEMPERATURE DIFFERENCES; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC JUNCTIONS;

EFFICIENCY; HEAT TRANSFER; SEMICONDUCTOR JUNCTIONS; THERMOELECTRIC EQUIPMENT;

NANOWIRES;

EID: 84863522532     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4728189     Document Type: Article

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