Dependence of Seebeck Coefficient on Carrier Concentration in Heavily B- And P-Doped Si1-xGex (x ≤ 0.05) System

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 11, 1999, Pages 6394-6400

  Yamashita, Osamu ^a   Sadatomi, Nobuhiro ^a  

^a HITACHI CABLE LTD   (Japan)

Author keywords

Arc melting; Dopant segregation; Loffe's theory; Seebeck coefficient; Si ge alloy

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY; MELTING; PHOSPHORUS; SEEBECK EFFECT; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

ARC MELTING; LOFFE'S THEORY; SEEBECK COEFFICIENT; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033228331     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6394     Document Type: Article

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