Crystallization characteristics of SiNx-doped SbTe films for phase change memory

Chinese Physics Letters

Volumn 29, Issue 3, 2012, Pages

  Wan, Qi Jian ^a   Feng, Jie ^a   Guo, Gang ^a  

^a Shanghai Jiao Tong University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANTIMONY ALLOYS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCOMPOSITE FILMS; PHASE CHANGE MEMORY; SEMICONDUCTOR DOPING; SILICON ALLOYS; X RAY DIFFRACTION;

ALLOY TARGET; AMORPHOUS STATE; COSPUTTERING; CRYSTALLIZATION PROCESS; CRYSTALLIZATION TEMPERATURE; FILM RESISTANCE; PHASE-CHANGE MEMORY; PROCESS STATE; RESISTANCE MEASUREMENT; STATE STABILITY;

NANOCOMPOSITES;

EID: 84863419735     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/29/3/036101     Document Type: Article

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