Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modelling

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 8 A, 2006, Pages 6177-6181

  Yin, You ^a   Sone, Hayato ^a   Hosaka, Sumio ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

Confined chalcogenide (CC) cell; Finite element modelling; Low reset current; Normal bottom contact (NBC) cell; PRAM

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ENERGY UTILIZATION; FINITE ELEMENT METHOD; PHASE SHIFT;

CHALCOGENIDE; CONFINED CHALCOGENIDE (CC); PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM); POWER CONSUMPTION; RESET CURRENT;

RANDOM ACCESS STORAGE;

EID: 33748541690     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.6177     Document Type: Article

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