Thermally induced phase separation of Si-Sb-Te alloy

Journal of Non-Crystalline Solids

Volumn 356, Issue 18-19, 2010, Pages 884-888

  Cheng, Y ^a   Yan, N ^a,b   Han, X D ^a   Zhang, Z ^a   Zhang, T ^c   Song, Z T ^c   Liu, B ^c   Feng, S L ^c  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b HUNAN UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Alloys; II VI Semiconductors; TEM STEM

Indexed keywords

AMORPHOUS SI; CHALCOGENIDE RANDOM ACCESS MEMORY; CRYSTALLINE SB; DOMAIN SIZE; II-VI SEMICONDUCTOR; IN-SITU HEATING; NANO SCALE; PHASE-SEPARATION PROCESS; POTENTIAL APPLICATIONS; TEM; TEM/STEM; THERMALLY INDUCED; THERMALLY INDUCED PHASE SEPARATION;

AMORPHOUS FILMS; AMORPHOUS SILICON; CERIUM ALLOYS; COMPOSITE MICROMECHANICS; CRYSTALLINE MATERIALS; CRYSTALLIZATION; PHASE MODULATION; PHASE SEPARATION; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SILICON ALLOYS;

EID: 77949264289     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2010.01.002     Document Type: Article

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