Polycrystalline silicon-germanium heating layer for phase-change memory applications

Applied Physics Letters

Volumn 89, Issue 5, 2006, Pages

  Lee, Seung Yun ^a   Choi, Kyu Jeong ^a   Ryu, Sang Ouk ^a,b   Yoon, Sung Min ^a   Lee, Nam Yeal ^a   Park, Young Sam ^a   Kim, Sang Hoon ^a   Lee, Sang Heung ^a   Yu, Byoung Gon ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Dankook University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; HEATING; SEMICONDUCTOR DOPING; SILICON ALLOYS; THERMAL CONDUCTIVITY; TITANIUM NITRIDE;

ELECTRICAL RESISTIVITY; PHASE-CHANGE MATERIALS; PHASE-CHANGE MEMORY (PCM);

POLYCRYSTALLINE MATERIALS;

EID: 33748476510     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335363     Document Type: Article

References (20)

1. T. A. Lowrey, S. J. Hudgens, W. Czubatyj, C. H. Dennison, S. A. Kostylev, and G. C. Wicker, Mater. Res. Soc. Symp. Proc. 803, 101 (2004).
2. W. K. Njoroge and M. Wuttig, J. Appl. Phys. 90, 3816 (2001).
3. G. Wicker, Ph.D. thesis, Wayne State University, 1996.
4. S. H. Lee, Y. N. Hwang, S. Y. Lee, K. C. Ryoo, S. J. Ahn, H. C. Koo, C. W. Jeong, Y.-T. Kim, G. H. Koh, G. T. Jeong, H. S. Jeong, and K. Kim, Tech. Dig. VLSI Symp. 2004, 20.
5. Ovonyx Inc., Technical presentation, http://www.ovonyx.com/technology. pdf, 1999.
6. N. Takaura, M. Terao, K. Kurotsuchi, T. Yamauchi, O. Tonomura, Y. Hanaoka, R. Takemura, K. Osada, T. Kawahara, and H. Matsuoka, Tech. Dig. - Int. Electron Devices Meet. 2003, 37.2.1.
7. S. Lai and T. Lowrey, Tech. Dig. - Int. Electron Devices Meet. 2001, 803.
8. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. Electron Devices 51, 452 (2004).
9. W. Y. Cho, B.-H. Cho, B.-G. Choi, H.-R. Oh, S. Kang, K.-S. Kim, K.-H. Kim, D.-E. Kim, C.-K. Kwak, H.-G. Byun, Y. Hwang, S. Ahn, G.-H. Koh, G. Jung, H. Jung, and K. Kim, IEEE J. Solid-State Circuits 40, 293 (2005).
10. D.-H. Kang, D.-H. Ahn, K.-B. Kim, J. F. Webb, and K.-W. Yi, J. Appl. Phys. 94, 3536 (2003).
11. B. Abeles, Phys. Rev. 131, 1906 (1963).
12. H. J. Goldsmid and G. S. Nolas, Proceedings of the International Conference on Thermoelectrics, 2001 (unpublished), p. 1.
13. D. D. L. Wijngaards and R. F. Wolffenbuttel, IEEE Trans. Electron Devices 52, 1014 (2005).
14. A. E. Franke, J. M. Heck, T.-J. King, and R. T. Howe, J. Microelectromech. Syst. 12, 160 (2003).
15. M. Strasser, R. Aigner, M. Franosch, and G. Wachutka, Sens. Actuators, A 97-98, 535 (2002).
16. P. Ruther, M. Ehmann, T. Lindemann, and O. Paul, Transducers, 12th International Conference on Solid-State Sensors, Actuators and Microsystems, 2003 (unpublished), Vol. 1, p. 73.
17. V. Giraud, J. Cluzel, V. Sousa, A. Jacquot, A. Dauscher, B. Lenoir, H. Scherrer, and S. Romer, J. Appl. Phys. 98, 13520 (2005).
18. J. F. Shackelford, W. Alexander, and J. S. Park, CRC Materials Science and Engineering Handbook, 2nd ed. (CRC, Boca Raton, FL, 1994), p. 281.
19. P. J. P. De Maayer and J. D. Mackenzie, Phys. Status Solidi A 34, k143 (1976).
20. P. P. Konstantinov, L. E. Shelimova, E. S. Avilov, M. A. Kretova, and V. S. Zemskov, Inorg. Mater. 37, 662 (2001).