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Journal of Vacuum Science and Technology B

Volumn 29, Issue 2, 2011, Pages

High-quality global hydrogen silsequioxane contact planarization for nanoimprint lithography

(3) Büyükköse, Serkan a Vratzov, Boris b Van Der Wiel, Wilfred G a

a UNIVERSITY OF TWENTE (Netherlands)

b NT and D Nanotechnology and Devices (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAKERIES; GLASS; HYDROGEN; REACTIVE ION ETCHING; SPIN GLASS;

CRITICAL DIMENSION CONTROL; ETCH SELECTIVITY; GLOBAL PLANARIZATIONS; HYDROGEN SILSEQUIOXANE; PATTERN TRANSFERS; PLANARIZATION TECHNIQUE; UNDERLYING LAYERS; UV-BASED NANOIMPRINT LITHOGRAPHIES;

NANOIMPRINT LITHOGRAPHY;

EID: 79953782230 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3562939 Document Type: Article

Times cited : (12)

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