Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes

Journal of Applied Physics

Volumn 111, Issue 11, 2012, Pages

  Zhang, Yiyun ^a   Wang, Liancheng ^a   Li, Xiao ^b   Yi, Xiaoyan ^a   Zhang, Ning ^a   Li, Jing ^a   Zhu, Hongwei ^b   Wang, Guohong ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT BARRIER; ELECTRICAL CONTACTS; HIGH TEMPERATURE ANNEALING TREATMENTS; LIGHT-EMITTING PERFORMANCE; METAL ATOMS; METAL PAD; OPTOELECTRONIC PROPERTIES; TRANSPARENT CONDUCTIVE; TRANSPORT CHARACTERISTICS;

CONDUCTIVE FILMS; ELECTRODES; GALLIUM NITRIDE; GRAPHENE;

LIGHT EMITTING DIODES;

EID: 84863337210     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4723813     Document Type: Conference Paper

References (20)

1. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987). 10.1063/1.98799
2. D. A. Rider, R. T. Tucker, B. J. Worfolk, K. M. Krause, A. Lalany, M. J. Brett, J. M. Buriak, and K. D. Harris, Nanotechnology 22, 085706 (2011). 10.1088/0957-4484/22/8/085706
3. T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, and L. A. Coldren, Appl. Phys. Lett. 74, 3930 (1999). 10.1063/1.124227
4. T.-Y. Park, Y.-S. Choi, J.-W. Kang, J.-H. Jeong, S.-J. Park, D. M. Jeon, J. W. Kim, and Y. C. Kim, Appl. Phys. Lett. 96, 051124 (2010). 10.1063/1.3298644
5. S. H. Tu, C. J. Lan, S. H. Wang, M. L. Lee, K. H. Chang, R. M. Lin, J. Y. Chang, and J. K. Sheu, Appl. Phys. Lett. 96, 133504 (2010). 10.1063/1.3377872
6. J.-Y. Lee, S. T. Connor, Y. Cui, and P. Peumans, Nano Lett. 8, 2689 (2008).
7. P. Kuang, J.-M. Park, W. Leung, R. C. Mahadevapuram, K. S. Nalwa, T.-G. Kim, S. Chaudhary, K.-M. Ho, and K. Constant, Adv. Mater. 23, 2469 (2011). 10.1002/adma.201100419
8. M. W. Rowell, M. A. Topinka, and M. D. McGehee, App. Phys. Lett. 88, 233506 (2006). 10.1063/1.2209887
9. J. Wu, H. A. Becerril, Z. Bao, Z. Liu, Y. Chen, and P. Peumans, Appl. Phys. Lett. 92, 263302 (2008). 10.1063/1.2924771
10. J. Liu, G. Xu, C. Rochford, R. Lu, J. Wu, C. M. Edwards, C. L. Berrie, Z. Chen, and V. A. Maroni, Appl. Phys. Lett. 99, 023111 (2011). 10.1063/1.3610939
11. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
12. K. Chung, C.-H. Lee, and G.-C. Yi, Science 330, 655 (2010). 10.1126/science.1195403
13. B.-J. Kim, M. A. Mastro, J. Hite, C. R. Eddy, Jr., and J. Kim, Opt. Express 18, 23030 (2010). 10.1364/OE.18.023030
14. G. Jo, M. Choe, C.-Y. Cho, J. H. Kim, W. Park, S. Lee, W.-K. Hong, T.-W. Kim, S.-J. Park, B. H. Hong, Y. H. Kahng, and T. Lee, Nanotechnology 21, 175201 (2010). 10.1088/0957-4484/21/17/175201
15. T. H. Seo, K. J. Lee, T. S. Oh, Y. S. Lee, H. Jeong, A. H. Park, H. Kim, Y. R. Choi, E.-K. Suh, T. V. Cuong, V. H. Pham, J. S. Chung, and E. J. Kim, Appl. Phys. Lett. 98, 251114 (2011). 10.1063/1.3601462
16. J. M. Lee, H. Y. Jeong, K. J. Choi, and W. I. Park, Appl. Phys. Lett. 99, 041115 (2011). 10.1063/1.3595941
17. See supplementary material at http://dx.doi.org/10.1063/1.4723813 E-JAPIAU-111-121211 for transparency (at 550 nm) versus sheet resistance and Raman spectrum of graphene.
18. S. J. Kim, T. Y. Nam, and T. G. Kim, IEEE Electron Device Lett. 32, 149 (2011). 10.1109/LED.2010.2093556
19. Z. H. Ni, H. M. Wang, Y. Ma, J. Kasim, Y. H. Wu, and Z. X. Shen, ACS Nano 2, 1033 (2008). 10.1021/nn800031m
20. T. O. Wehling, K. S. Novoselov, S. V. Morozov, E. E. Vdovin, M. I. Katsnelson, A. K. Geim, and A. I. Lichtenstein, Nano Lett. 8, 173 (2008). 10.1021/nl072364w