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Volumn 100, Issue 24, 2012, Pages

Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FLUCTUATION; BAND ALIGNMENTS; CLADDING LAYER; EMISSION ENERGIES; EXCITATION POWER; GAAS; INAS; INAS QUANTUM DOTS; INAS SELF-ASSEMBLED QUANTUM DOTS; INTERMEDIATE-BAND SOLAR CELLS; PHOTOLUMINESCENCE INTENSITIES; STRUCTURAL AND OPTICAL PROPERTIES;

EID: 84863336315     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729419     Document Type: Article
Times cited : (26)

References (32)
  • 1
    • 0031164889 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.78.5014
    • A. Luque and A. Martí, Phys. Rev. Lett. 78, 5014 (1997). 10.1103/PhysRevLett.78.5014
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 5014
    • Luque, A.1    Martí, A.2
  • 19
    • 0029305386 scopus 로고
    • 10.1016/0022-0248(95)80057-J
    • Y.-H. Zhang, J. Cryst. Growth 150, 838 (1995). 10.1016/0022-0248(95) 80057-J
    • (1995) J. Cryst. Growth , vol.150 , pp. 838
    • Zhang, Y.-H.1
  • 26
    • 0031145702 scopus 로고    scopus 로고
    • 10.1016/S0022-0248(96)00948-7
    • R. Kaspi and K. R. Evans, J. Cryst. Growth 175/176, 838 (1997). 10.1016/S0022-0248(96)00948-7
    • (1997) J. Cryst. Growth , vol.175-176 , pp. 838
    • Kaspi, R.1    Evans, K.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.