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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1660-1664

Formation and property of InSb self-assembled quantum dots on GaAsSb lattice matched to InP

(4) Wu, Bing Ruey a Cheng, K Y a Xu, Chaofeng a Hsieh, Kuang Chien a

a United States of America (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM DEPOSITION RATES; PEAK WAVELENGTH; PHOTOLUMINESCENCE SPECTRUM; SELF-ASSEMBLED QUANTUM DOTS (SAQD);

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33744800004 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.2190667 Document Type: Article

Times cited : (3)

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