Analysis of electronic carrier traps in Cr-SrTiO 3-based charge trap flash memory devices

Applied Physics Letters

Volumn 100, Issue 24, 2012, Pages

  Seo, Yujeong ^a   Yeong Song, Min ^a   Park, Soyun ^a   Geun Kim, Tae ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BULK TRAPS; CHARGE TRAP FLASH MEMORIES; CONDUCTION-BAND MINIMUM; DEEP LEVEL; ELECTRONIC CARRIERS; INTERFACIAL TRAPS;

ACTIVATION ENERGY; CHARGE TRAPPING; DEEP LEVEL TRANSIENT SPECTROSCOPY; POINT DEFECTS; SILICON; STRONTIUM TITANATES;

FLASH MEMORY;

EID: 84863317825     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729127     Document Type: Article

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