Charge capture kinetics of nitride traps in Oxide-Nitride-OxidE(ONO) structures

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 671-679

  Cho, H Y ^a   Park, C J ^b   Oh, H T ^a   Kwak, D W ^a   Lee, Y H ^a   Yang, W C ^a   Kim, C W ^b  

^a Dongguk University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; ELECTRON TRAPS; NITRIDES; SILICON;

CAPACITANCE VOLTAGE HYSTERESIS LOOPS; P-TYPE SUBSTRATES; PULSE TIME; VALENCE BAND;

SEMICONDUCTOR STORAGE;

EID: 33845267192     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209314     Document Type: Conference Paper

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