In-situ X-ray photoemission spectroscopy study of atomic layer deposition of TiO 2 on silicon substrate

Japanese Journal of Applied Physics

Volumn 51, Issue 3 PART 1, 2012, Pages

  Lee, Seung Youb ^a   Jeon, Cheolho ^a   Kim, Seok Hwan ^b   Kim, Yooseok ^a   Jung, Woosung ^a   An, Ki Seok ^b   Park, Chong Yun ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORE-LEVEL SPECTRA; FOUR CYCLES; HALF REACTIONS; HYDROXYL CONCENTRATIONS; IN-SITU; INITIAL STAGES; LIGAND EXCHANGE REACTIONS; PERIODIC OSCILLATION; SI (001) SUBSTRATE; SI OXIDE; SILICON SUBSTRATES; TIO; TITANIUM TETRAISOPROPOXIDE; X RAY PHOTOEMISSION SPECTROSCOPY; XPS ANALYSIS;

PHOTOELECTRON SPECTROSCOPY; SILICON; TITANIUM; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84863262848     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.031102     Document Type: Article

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