Photoactive memory by a si-nanowire field-effect transistor

ACS Nano

Volumn 6, Issue 2, 2012, Pages 1449-1454

  Kim, Chung Jin ^a   Choi, Sung Jin ^a   Ahn, Jae Hyuk ^a   Han, Jin Woo ^a   Kim, Hoyeon ^a   Yoo, Seunghyup ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

double gate; field effect transistor; memory; nanogap; PCBM; photoelectrical program; silicon nanowire; threshold voltage

Indexed keywords

DOUBLE-GATE; MEMORY; NANO-GAP; PCBM; PHOTOELECTRICAL PROGRAM; SILICON NANOWIRE;

CMOS INTEGRATED CIRCUITS; MESFET DEVICES; NANOWIRES; SEPARATION; THRESHOLD VOLTAGE;

SILICON;

EID: 84863247539     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2042434     Document Type: Article

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