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Japanese Journal of Applied Physics

Volumn 51, Issue 2 PART 2, 2012, Pages

Fabrication and analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) metal-insulator-semiconductor structures

(4) Kudo, Masahiro a Shih, Hong An a Akabori, Masashi a Suzuki, Toshi Kazu a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ANALYSIS RESULTS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CONDUCTANCE METHOD; CURRENT-VOLTAGE MEASUREMENTS; DIFFERENT FREQUENCY; DIRECT DEPOSITION; GAAS; INSULATING PROPERTIES; INSULATOR FILMS; INTERFACE STATE; INTERFACE STATE DENSITY; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MIS STRUCTURE;

DISPERSIONS; GALLIUM ARSENIDE; GERMANIUM; INTERFACE STATES; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

MIS DEVICES;

EID: 84863178793 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.02BF07 Document Type: Article

Times cited : (13)

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