Al/AlN/InP metal-insulator-semiconductor-diode characteristics with amorphous AlN films deposited by electron-cyclotron-resonance sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 334-342

  Saito, Kunio ^a   Ono, Toshiro ^a   Shimada, Masaru ^a   Shigekawa, Naoteru ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Damage; ECR; Hydrogen termination; InP; Interface traps; MIS; Tetrahedral

Indexed keywords

ALUMINUM NITRIDE; AMORPHOUS FILMS; ANNEALING; CAPACITANCE; DEPOSITION; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; MAGNETRON SPUTTERING; MISFET DEVICES; NATURAL FREQUENCIES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE CLEANING;

DAMAGES; ELECTRON CYCLOTRON RESONANCE (ECR); HYDROGEN TERMINATION; INTERFACE TRAPS; METAL-INSULATOR-SEMICONDUCTORS (MIS); TETRAHEDRAL;

SEMICONDUCTOR DIODES;

EID: 15544365326     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.334     Document Type: Article

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