Theoretical study of the resistance switching mechanism in rutile TiO 2-x for ReRAM: The role of oxygen vacancies and hydrogen impurities

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 46-47

  Park, S G ^a   Magyari Kope B ^a   Nishi, Y ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; CONDUCTIVE CHANNELS; CONDUCTIVE FILAMENTS; HYDROGEN ATOMS; HYDROGEN IMPURITY; RESISTANCE SWITCHING; RUTILE TIO; THEORETICAL STUDY; TIO;

CALCULATIONS; HYDROGEN; OXIDE MINERALS; OXYGEN; TITANIUM DIOXIDE;

OXYGEN VACANCIES;

EID: 80052667351     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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