Dangling-bond logic gates on a Si(100)-(2×1)-H surface

Journal of Physics Condensed Matter

Volumn 24, Issue 9, 2012, Pages

  Kawai, Hiroyo ^a   Ample, Francisco ^a   Wang, Qing ^b   Yeo, Yong Kiat ^a,b   Saeys, Mark ^a,b   Joachim, Christian ^a,c  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; ATOMIC-SCALE WIRES; BOOLEAN LOGIC; HYDROGEN ATOMS; LOGIC INPUT; MACROSCOPIC SCALE; ON/OFF RATIO; OUTPUT CURRENT; PHYSISORBED; QUANTUM CIRCUIT DESIGN; SEMI-EMPIRICAL; SI DANGLING BONDS; SI(1 0 0); TRANSPORT CALCULATION;

LOGIC GATES; QUANTUM CHEMISTRY;

SILICON;

HYDROGEN; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; LOGIC; SURFACE PROPERTY;

HYDROGEN; LOGIC; MODELS, MOLECULAR; MOLECULAR CONFORMATION; SILICON; SURFACE PROPERTIES;

EID: 84863165313     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/9/095011     Document Type: Article

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