-
1
-
-
36049053305
-
-
PRLTAO 0031-9007, 10.1103/PhysRevLett.21.1450
-
S. R. Ovshinsky, Phys. Rev. Lett. PRLTAO 0031-9007 21, 1450 (1968). 10.1103/PhysRevLett.21.1450
-
(1968)
Phys. Rev. Lett.
, vol.21
, pp. 1450
-
-
Ovshinsky, S.R.1
-
3
-
-
33846491447
-
11 bits per square centimetre
-
DOI 10.1038/nature05462, PII NATURE05462
-
J. E. Green, J. W. Choi, A. Boukai, Y. Bunimovich, E. Johnston-Halperin, E. DeIonno, Y. Luo, B. A. Sheriff, K. Xu, Y. S. Shin, H. -R. Tseng, J. F. Stoddart, and J. R. Heath, Nature (London) NATUAS 0028-0836 445, 414 (2007). 10.1038/nature05462 (Pubitemid 46160906)
-
(2007)
Nature
, vol.445
, Issue.7126
, pp. 414-417
-
-
Green, J.E.1
Wook Choi, J.2
Boukai, A.3
Bunimovich, Y.4
Johnston-Halperin, E.5
Deionno, E.6
Luo, Y.7
Sheriff, B.A.8
Xu, K.9
Shik Shin, Y.10
Tseng, H.-R.11
Stoddart, J.F.12
Heath, J.R.13
-
4
-
-
36549083365
-
Two series oxide resistors applicable to high speed and high density nonvolatile memory
-
DOI 10.1002/adma.200700251
-
M. J. Lee, Y. Park, D. S. Suh, E. H. Lee, S. Seo, D. C. Kim, R. Jung, B. S. Kang, S. E. Ahn, C. B. Lee, D. H. Seo, Y. K. Cha, I. K. Yoo, J. S. Kim, and B. H. Park, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 19, 3919 (2007). 10.1002/adma.200700251 (Pubitemid 350190438)
-
(2007)
Advanced Materials
, vol.19
, Issue.22
, pp. 3919-3923
-
-
Lee, M.-J.1
Park, Y.2
Suh, D.-S.3
Lee, E.-H.4
Seo, S.5
Kim, D.-C.6
Jung, R.7
Kang, B.-S.8
Ahn, S.-E.9
Lee, C.B.10
Seo, D.H.11
Cha, Y.-K.12
Yoo, I.-K.13
Kim, J.-S.14
Park, B.H.15
-
5
-
-
0000091193
-
-
RPPHAG 0034-4885, 10.1088/0034-4885/33/3/306
-
G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. RPPHAG 0034-4885 33, 1129 (1970). 10.1088/0034-4885/33/3/306
-
(1970)
Rep. Prog. Phys.
, vol.33
, pp. 1129
-
-
Dearnaley, G.1
Stoneham, A.M.2
Morgan, D.V.3
-
6
-
-
23944447615
-
2 thin films grown by atomic-layer deposition
-
DOI 10.1063/1.2001146, 033715
-
B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. JAPIAU 0021-8979 98, 033715 (2005). 10.1063/1.2001146 (Pubitemid 41204789)
-
(2005)
Journal of Applied Physics
, vol.98
, Issue.3
, pp. 1-10
-
-
Choi, B.J.1
Jeong, D.S.2
Kim, S.K.3
Rohde, C.4
Choi, S.5
Oh, J.H.6
Kim, H.J.7
Hwang, C.S.8
Szot, K.9
Waser, R.10
Reichenberg, B.11
Tiedke, S.12
-
7
-
-
33646885556
-
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
-
DOI 10.1063/1.2204649
-
D. C. Kim, S. Seo, S. E. Ahn, D. -S. Suh, M. J. Lee, B. -H. Park, I. K. Yoo, I. G. Baek, H. -J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. -I. Chung, J. T. Moon, and B. I. Ryu, Appl. Phys. Lett. APPLAB 0003-6951 88, 202102 (2006). 10.1063/1.2204649 (Pubitemid 43781782)
-
(2006)
Applied Physics Letters
, vol.88
, Issue.20
, pp. 202102
-
-
Kim, D.C.1
Seo, S.2
Ahn, S.E.3
Suh, D.-S.4
Lee, M.J.5
Park, B.-H.6
Yoo, I.K.7
Baek, I.G.8
Kim, H.-J.9
Yim, E.K.10
Lee, J.E.11
Park, S.O.12
Kim, H.S.13
Chung, U.-I.14
Moon, J.T.15
Ryu, B.I.16
-
8
-
-
33747862197
-
2 thin films showing resistive switching
-
DOI 10.1063/1.2336621
-
D. S. Jeong, H. Schroeder, and R. Waser, Appl. Phys. Lett. APPLAB 0003-6951 89, 082909 (2006). 10.1063/1.2336621 (Pubitemid 44286167)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.8
, pp. 082909
-
-
Jeong, D.S.1
Schroeder, H.2
Waser, R.3
-
9
-
-
44849088973
-
-
APPLAB 0003-6951, 10.1063/1.2931087
-
J. Y. Son and Y. -H. Shin, Appl. Phys. Lett. APPLAB 0003-6951 92, 222106 (2008). 10.1063/1.2931087
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 222106
-
-
Son, J.Y.1
Shin, Y.-H.2
-
10
-
-
33745767057
-
2 thin films
-
DOI 10.1063/1.2219726
-
B. J. Choi, S. Choi, K. M. Kim, Y. C. Shin, C. S. Hwang, S. -Y. Hwang, S. -S. Cho, S. Park, and S. -K. Hong, Appl. Phys. Lett. APPLAB 0003-6951 89, 012906 (2006). 10.1063/1.2219726 (Pubitemid 44025432)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.1
, pp. 012906
-
-
Choi, B.J.1
Choi, S.2
Kim, K.M.3
Shin, Y.C.4
Hwang, C.S.5
Hwang, S.-Y.6
Cho, S.-S.7
Park, S.8
Hong, S.-K.9
-
11
-
-
50249156872
-
-
TDIMD5 0163-1918
-
K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Jizuka, Y. Ito, A. Takahashi, and A. Okano, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 767.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2007
, pp. 767
-
-
Tsunoda, K.1
Kinoshita, K.2
Noshiro, H.3
Yamazaki, Y.4
Jizuka, T.5
Ito, Y.6
Takahashi, A.7
Okano, A.8
-
12
-
-
70349907463
-
-
APPLAB 0003-6951, 10.1063/1.3242337
-
G. -H. Buh, I. Hwang, and B. H. Park, Appl. Phys. Lett. APPLAB 0003-6951 95, 142101 (2009). 10.1063/1.3242337
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 142101
-
-
Buh, G.-H.1
Hwang, I.2
Park, B.H.3
-
13
-
-
60349087905
-
-
APPLAB 0003-6951, 10.1063/1.3081401
-
D. Ielmini, C. Cagli, and F. Nardi, Appl. Phys. Lett. APPLAB 0003-6951 94, 063511 (2009). 10.1063/1.3081401
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 063511
-
-
Ielmini, D.1
Cagli, C.2
Nardi, F.3
-
14
-
-
50249141738
-
-
U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, and M. Fanciulli, IEDM Tech. Dig.-Int. Electron Devices Meet. 2007, 775.
-
IEDM Tech. Dig. - Int. Electron Devices Meet.
, vol.2007
, pp. 775
-
-
Russo, U.1
Ielmini, D.2
Cagli, C.3
Lacaita, A.L.4
Spiga, S.5
Wiemer, C.6
Perego, M.7
Fanciulli, M.8
-
15
-
-
17044393085
-
Dielectric breakdown and Poole-Frenkel field saturation in silicon oxynitride thin films
-
DOI 10.1063/1.1865338, 072103
-
S. Habermehl and R. T. Apodaca, Appl. Phys. Lett. APPLAB 0003-6951 86, 072103 (2005). 10.1063/1.1865338 (Pubitemid 40495362)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.7
, pp. 1-3
-
-
Habermehl, S.1
Apodaca, R.T.2
-
16
-
-
27744511347
-
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability
-
DOI 10.1016/j.microrel.2005.04.004, PII S0026271405000831
-
E. Wu and J. Sune, Microelectron. Reliab. MCRLAS 0026-2714 45, 1809 (2005). 10.1016/j.microrel.2005.04.004 (Pubitemid 41625776)
-
(2005)
Microelectronics Reliability
, vol.45
, Issue.12
, pp. 1809-1834
-
-
Wu, E.Y.1
Sune, J.2
-
17
-
-
49149126998
-
-
APPLAB 0003-6951, 10.1063/1.2963983
-
C. Park, S. H. Jeon, S. C. Chae, S. Han, B. H. Park, and D. -W. Kim, Appl. Phys. Lett. APPLAB 0003-6951 93, 042102 (2008). 10.1063/1.2963983
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 042102
-
-
Park, C.1
Jeon, S.H.2
Chae, S.C.3
Han, S.4
Park, B.H.5
Kim, D.-W.6
-
18
-
-
49149127469
-
-
APPLAB 0003-6951, 10.1063/1.2966141
-
C. Yoshida, K. Kinoshita, T. Yamasaki, and Y. Sugiyama, Appl. Phys. Lett. APPLAB 0003-6951 93, 042106 (2008). 10.1063/1.2966141
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 042106
-
-
Yoshida, C.1
Kinoshita, K.2
Yamasaki, T.3
Sugiyama, Y.4
-
19
-
-
33947326575
-
2 films
-
DOI 10.1063/1.2712777
-
K. Tsunoda, Y. Fukuzumi, J. R. Jameson, Z. Wang, P. B. Griffin, and Y. Nishi, Appl. Phys. Lett. APPLAB 0003-6951 90, 113501 (2007). 10.1063/1.2712777 (Pubitemid 46439844)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.11
, pp. 113501
-
-
Tsunoda, K.1
Fukuzumi, Y.2
Jameson, J.R.3
Wang, Z.4
Griffin, P.B.5
Nishi, Y.6
-
20
-
-
34047263784
-
Resistance switching memory device with a nanoscale confined current path
-
DOI 10.1063/1.2720747
-
Y. Ogimoto, Y. Tamai, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. APPLAB 0003-6951 90, 143515 (2007). 10.1063/1.2720747 (Pubitemid 46550168)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.14
, pp. 143515
-
-
Ogimoto, Y.1
Tamai, Y.2
Kawasaki, M.3
Tokura, Y.4
|