Disruption of the chemical environment and electronic structure in p-type Cu 2O films by alkaline doping

Journal of Physical Chemistry C

Volumn 116, Issue 25, 2012, Pages 13524-13535

  Caballero Briones, F ^a   Palacios Padros A ^b   Calzadilla, O ^c   Moreira, I De P R ^b   Sanz, Fausto ^d,e  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSITY OF BARCELONA   (Spain)

^c UNIVERSITY OF HAVANA   (Cuba)

^d INSTITUTE FOR BIOENGINEERING OF CATALONIA IBEC   (Spain)

^e BIOMATERIALES Y NANOMEDICINA CIBER BBN   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; ALKALINE DOPING; ALKALINE IONS; ANODIZATIONS; CHEMICAL ENVIRONMENT; COPPER ATOMS; CUPRITE STRUCTURE; CURRENT SENSING ATOMIC FORCE MICROSCOPIES; DENSITY OF STATE; DIRECT BAND GAP; DOPANT INCORPORATION; DOPANT STATE; DOPING IONS; ELECTRICAL CONDUCTIVITY; ELECTROCHEMICAL IMPEDANCE; ELECTROCHEMICAL TUNNELING MICROSCOPY; FIRST-PRINCIPLES CALCULATION; INSULATING GAP; ION SIZE; MAIN EFFECT; OXYGEN SPECIES; P-TYPE; PARAMETER ANALYSIS; PHOTOCURRENT RESPONSE; PHOTOELECTROCHEMICALS; REPULSIVE INTERACTIONS; SURFACE ACCUMULATION; THEORETICAL STUDY; URBACH TAIL; VACANCY DIFFUSION; VALENCE-BAND MAXIMUM ENERGY;

ALKALINITY; ATOMIC FORCE MICROSCOPY; CALCULATIONS; CESIUM; CESIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; FILM GROWTH; IONS; OPTICAL PROPERTIES; OXYGEN; PHOTOELECTRONS; REDUCTION; SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER;

EID: 84863084354     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3023937     Document Type: Article

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