Direct observation of the valence band edge by in situ ECSTM-ECTS in p-type Cu2O layers prepared by copper anodization

Journal of Physical Chemistry C

Volumn 113, Issue 3, 2009, Pages 1028-1036

  Caballero Briones, Felipe ^a,e   Artés, Juan M ^a,b   Díez Pérez, Ismael ^a,f   Gorostiza, Pau ^b,c,d   Sanz, Fausto ^a,b,c  

^a UNIVERSITY OF BARCELONA   (Spain)

^b INSTITUTE FOR BIOENGINEERING OF CATALONIA IBEC   (Spain)

^c BIOMATERIALES Y NANOMEDICINA CIBER BBN   (Spain)

^d INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

^e INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^f AZ 85281   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKALINE MEDIUMS; ANODIZATION; BAND-BENDING; CARRIER DENSITIES; CONDUCTION BAND EDGES; CU ELECTRODES; DIRECT OBSERVATIONS; ELECTRO-CHEMICAL IMPEDANCES; ELECTROCHEMICAL ANODIZATION; ELECTROCHEMICAL SCANNING TUNNELING MICROSCOPIES; ELECTRONIC DIAGRAMS; ENERGY SCALE; FLAT BAND POTENTIALS; IN-SITU; MOTT-SCHOTTKY PLOTS; P TYPES; P-TYPE SEMICONDUCTORS; POLY-CRYSTALLINE; SILVER/SILVER CHLORIDE ELECTRODES; SPACE CHARGE LAYERS; SUB BANDS; TUNNELING SPECTROSCOPIES; UNIFORM LAYERS; VALENCE BAND EDGES;

CHLORINE COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; SCANNING TUNNELING MICROSCOPY;

ELECTROCHEMICAL ELECTRODES;

EID: 65249142718     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp805915a     Document Type: Article

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