Impact of GaN channel scaling in InAlN/GaN HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Lee, Dong Seup ^a   Lu, Bin ^a   Azize, Mohamad ^a   Gao, Xiang ^b   Guo, Shiping ^b   Kopp, David ^c   Fay, Patrick ^c   Palacios, Tomás ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IQE INC   (United States)

^c UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY SCATTERING; BARRIER LAYERS; CHANNEL THICKNESS; CHARGE CONFINEMENT; ELECTRON VELOCITY; GATE LENGTH; INTERFACE SCATTERING; MOBILITY DEGRADATION; RF PERFORMANCE; SHORT-CHANNEL EFFECT;

ELECTRON DEVICES; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84863079472     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131583     Document Type: Conference Paper

References (9)

1. M. Higashiwaki, T. Mimura, and T. Matsui, "AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz," Appl. Phys. Express, vol. 1, no. 2, pp. 021103-1-3, Feb. 2008.
2. max in 40-nm GaN DH-HEMTs with Re-grown Ohmic," IEDM Tech. Dig., 2010, paper 30.1, pp. 672-675.
3. H. Sun, A. R. Alt, H. Benedickter, E. Feltin, J.-F. Carlin, M. Gonschorek, N. Grandjean, and C. R. Bolognesi, "205-GHz (Al, In)N/GaN HEMTs,"IEEE Electron Device Lett., vol. 31, no. 9, pp. 957-959, Sep. 2010.
4. M. Micovic, P. Hashimoto, M. Hu, I. Milosavljevic, J. Duvall, P. J. Willadsen, W.-S. Wong, A. M. Conway, A. Kurdoghlian, P. W. Deelman, J.-S. Moon, A. Schmitz, and M. J. Delaney, "GaN Double Heterojunction Field Effect Transistor For Microwave and Millimeter-wave Power Applications,"IEDM Tech. Dig., 2004, pp 807-810.
5. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/GaN High Electron Mobility Transistors With InGaN Back-Barriers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 13-15, Jan. 2006.
6. J. Liu, Y. Zhou, J. Zhu, K. M. Lau, and K. J. Chen, "AlGaN/GaN/ InGaN/GaN DH-HEMTs With an InGaN Notch for Enhanced Carrier Confinement," IEEE Electron Device Lett., vol. 27, no. 1, pp. 10-12, Jan. 2006.
7. D. S. Lee, X. Gao, S. Guo, and T. Palacios, "InAlN/GaN HEMTs With AlGaN Back Barriers," IEEE Electron Device Lett., vol. 32, no. 5, pp. 617-619, May 2011.
8. T in AlGaN/GaN HEMTs," IEDM Tech. Dig., 2010, paper 30.2, pp.676-679.
9. D. S. Lee, J. W. Chung, H. Wang, X. Gao, S. Guo, P. Fay, and T. Palacios, "245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment," IEEE Electron Device Lett., vol. 32, no. 6, pp. 755-757, Jun., 2011.