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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 1, 2012, Pages

Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

(10) Lo, Chien Fong a Liu, Lu a Chu, Byung Hwan a Ren, Fan a Pearton, Stephen J a Doré, Sylvain b Hsu, Chien Hsing c Kim, Jihyun d Dabiran, Amir M e Chow, Peter P e

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

b UNIVERSITY OF FLORIDA (United States)

c FENG CHIA UNIVERSITY (Taiwan)

d Korea University (South Korea)

e SVT ASSOCIATES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; CARBON MONOXIDE; CHEMISORPTION; ELECTRON GAS; GALLIUM NITRIDE; NANORODS; TWO DIMENSIONAL; ZINC OXIDE;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; AMBIENTS; CARBON MONOXIDE DETECTION; CHEMISORBED OXYGEN; CO DETECTION; DETECTION LIMITS; DETECTION SENSITIVITY; OXIDE SURFACE; SATURATION DRAIN CURRENT; ZNO; ZNO SURFACE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84863075991 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3672010 Document Type: Article

Times cited : (13)

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