Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 2, 2010, Pages 376-379

  Wang, Yu Lin ^a   Chang, C Y ^a   Lim, Wantae ^a   Pearton, S J ^a   Norton, D P ^a   Chu, B H ^a   Lo, C F ^a   Ren, F ^a   Johnson, J W ^b   Rajagopal, P ^b   Roberts, J C ^b   Piner, E L ^b   Linthicum, K J ^b  

^a University of Florida   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMPLIFICATION; CARRIER CONCENTRATION; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; GAS SENSING ELECTRODES; INDIUM; OXYGEN; OXYGEN SENSORS; PLASMAS; SENSORS; ZINC; ZINC OXIDE;

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; COSPUTTERING; GATE REGION; INDIUM ZINC OXIDES; LOW TEMPERATURES; OXYGEN GAS; OXYGEN-SENSING; PREANNEALING; RESPONSE TIME; ROOM TEMPERATURE; ZNO;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77950553666     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3368467     Document Type: Article

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