High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

Applied Physics Letters

Volumn 98, Issue 22, 2011, Pages

  Hung, S C ^a   Chen, C W ^a   Shieh, C Y ^a   Chi, G C ^b   Fan, R ^c   Pearton, S J ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CARBON MONOXIDE SENSOR; CO CONCENTRATIONS; CO MOLECULE; GATE REGION; HIGH SENSITIVITY; IN-CHANNELS; LIMIT OF DETECTION; OPEN CAVITY; PERFECT CRYSTALS; POSITIVE CHARGES; ROOM TEMPERATURE; SENSING AREAS; SOURCE-DRAIN CURRENT; ZNO; ZNO NANOWIRES;

CARBON MONOXIDE; CHEMICAL VAPOR DEPOSITION; DRAIN CURRENT; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; NANOWIRES; ZINC; ZINC OXIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79958845190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3596440     Document Type: Article

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